Silicon Epitaxial Wafer
| Post Date: |
Mar 07,2013 |
| Expiry Date: |
Sep 03,2013 |
| Detailed Description: |
Epitaxy is the process of depositing a thin layer on substrate, Epitaxy layer can be as the same as the basis(Si/Si) or different with the basis (SiGe/Si or SiC/S) ,Silicon epitaxy is a layer of single-crystal silicon on wafer,The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate's crystalline structure. We can offer Silicon epitaxial wafer and SiGe Epitaxial Wafer,diameter from 4” to 8” . Wafer Type: Blanket Epitaxial Wafer, Patterned Epitaxial Wafer with Burried Layer. Application: Bipolar device, Power MOSFET,IGBT,Detectors and rectifier, IC and As-doped substrate.
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| Company: |
Xiamen Powerway Advanced Material Co.,Limited
[ China ]
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| Contact: |
Victor Chan |
| Tel: |
+86-592-5601404 |
| Fax: |
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| Email: |
sales@powerwaywafer.com |
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